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IRF6619TR1PBF
Infineon TechnologiesRoHS
/
Package DirectFET? Isometric MX
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 30A DIRECTFET
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Inventory: 6792
Minimum: 1
Total Price: USD $5.9
Unit Price: USD $5.8976
≥1 USD $5.8976
≥10 USD $4.8393
≥100 USD $4.68825
≥500 USD $4.5372
≥1000 USD $4.38615
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MX
Number of Pins 5
Supplier Device Package DIRECTFET? MX
Dimensions
Height 506μm
Length 6.35mm
Width 5.05mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Current Rating 30A
Number of Elements 1
Power Dissipation-Max 2.8W Ta 89W Tc
Power Dissipation 89W
Turn On Delay Time 21 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5040pF @ 10V
Current - Continuous Drain (Id) @ 25°C 30A Ta 150A Tc
Gate Charge (Qg) (Max) @ Vgs 57nC @ 4.5V
Rise Time 71ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.3 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 24A
Threshold Voltage 1.55V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Input Capacitance 5.04nF
Drain to Source Resistance 3mOhm
Rds On Max 2.2 mΩ
Nominal Vgs 1.55 V
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