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FDMS8680
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 14A POWER56
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Inventory: 7503
Minimum: 1
Total Price: USD $0.94
Unit Price: USD $0.9386
≥1 USD $0.9386
≥10 USD $0.77045
≥100 USD $0.7467
≥500 USD $0.722
≥1000 USD $0.69825
Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 7MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 2.5W Ta 50W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1590pF @ 15V
Current - Continuous Drain (Id) @ 25°C 14A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 3 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 63A
Drain to Source Breakdown Voltage 30V
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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