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MMSF3P02HDR2G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET PFET SO8S 20V 5.6A 75mOhm
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Inventory: 3322
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Total Price: USD $0.54
Unit Price: USD $0.5377
≥1 USD $0.5377
≥10 USD $0.4408
≥100 USD $0.4275
≥500 USD $0.41325
≥1000 USD $0.39995

Technical Details

Supply Chain

Factory Lead Time 27 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 day ago)

Physical

Contact Plating Tin
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON

Dimensions

Height 1.5mm
Length 5mm
Width 4mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 75MOhm
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -3A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 25 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 16V
Current - Continuous Drain (Id) @ 25°C 5.6A Ta
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Rise Time 40 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 97 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 5.6A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 30A
Avalanche Energy Rating (Eas) 567 mJ
Nominal Vgs 1.5 V

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