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IPC100N04S51R2ATMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 100A 8TDSON
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Inventory: 5680
Minimum: 1
Total Price: USD $4.97
Unit Price: USD $4.96755
≥1 USD $4.96755
≥10 USD $4.0755
≥100 USD $3.9482
≥500 USD $3.8209
≥1000 USD $3.6936
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series OptiMOS?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-F3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.4V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds 7650pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 131nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 7V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 100A
Drain-source On Resistance-Max 0.0014Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 480 mJ
Compliance
RoHS Status ROHS3 Compliant
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