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SPD08N50C3ATMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 7.6A DPAK
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Inventory: 935
Minimum: 1
Total Price: USD $0.79
Unit Price: USD $0.7866
≥1 USD $0.7866
≥10 USD $0.646
≥100 USD $0.6251
≥500 USD $0.60515
≥1000 USD $0.5852
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package PG-TO252-3-1
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series CoolMOS?
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 560V
Technology MOSFET (Metal Oxide)
Current Rating 7.6A
Number of Elements 1
Power Dissipation-Max 83W Tc
Element Configuration Single
Power Dissipation 83W
Turn On Delay Time 6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 3.9V @ 350μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.6A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Rise Time 5ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 7.6A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Dual Supply Voltage 560V
Input Capacitance 750pF
Drain to Source Resistance 600mOhm
Rds On Max 600 mΩ
Nominal Vgs 3 V
Dimensions
Height 2.41mm
Length 6.73mm
Width 6.22mm
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