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IRF6795MTRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package DirectFET? Isometric MX
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 25V 32A DIRECTFET-MX
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Inventory: 1482
Minimum: 1
Total Price: USD $0.58
Unit Price: USD $0.583699
≥1 USD $0.583699
≥10 USD $0.550661
≥100 USD $0.519491
≥500 USD $0.490089
≥1000 USD $0.462348

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET?
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 75W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 75W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.8m Ω @ 32A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4280pF @ 13V
Current - Continuous Drain (Id) @ 25°C 32A Ta 160A Tc
Gate Charge (Qg) (Max) @ Vgs 53nC @ 4.5V
Rise Time 27 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 250A

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 506μm
Length 6.35mm
Width 5.05mm

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MX
Number of Pins 7
Transistor Element Material SILICON

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