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IRL7486MTRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package DirectFET? Isometric ME
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 40V 209A
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Inventory: 4545
Minimum: 1
Total Price: USD $1.07
Unit Price: USD $1.07445
≥1 USD $1.07445
≥10 USD $0.8816
≥100 USD $0.85405
≥500 USD $0.8265
≥1000 USD $0.79895

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric ME
Number of Pins 2
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series HEXFET?, StrongIRFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XBCC-N6
Number of Elements 1
Power Dissipation-Max 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.25m Ω @ 123A, 10V
Vgs(th) (Max) @ Id 2.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6904pF @ 25V
Current - Continuous Drain (Id) @ 25°C 209A Tc
Gate Charge (Qg) (Max) @ Vgs 111nC @ 4.5V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 54 ns
Continuous Drain Current (ID) 209A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 836A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 190 mJ

Dimensions

Height 700μm
Length 6.35mm
Width 5.05mm

Compliance

REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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