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IRFS31N20DTRR
Infineon TechnologiesRoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 31A D2PAK
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Inventory: 2256
Minimum: 1
Total Price: USD $0.87
Unit Price: USD $0.87115
≥1 USD $0.87115
≥10 USD $0.71535
≥100 USD $0.69255
≥500 USD $0.6707
≥1000 USD $0.6479
Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2000
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.21.00.95
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.1W Ta 200W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 82m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2370pF @ 25V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Drain Current-Max (Abs) (ID) 31A
Drain-source On Resistance-Max 0.082Ohm
Pulsed Drain Current-Max (IDM) 124A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 420 mJ
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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