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IPA60R520CPXKSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description CoolMOS? Tube Through Hole N-Channel Mosfet Transistor 6.8A Tc 6.8A 30W Tc 600V
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Inventory: 8214
Minimum: 1
Total Price: USD $9.8
Unit Price: USD $9.80495
≥1 USD $9.80495
≥10 USD $8.04555
≥100 USD $7.7938
≥500 USD $7.54205
≥1000 USD $7.29125

Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 30W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 520m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 630pF @ 100V
Current - Continuous Drain (Id) @ 25°C 6.8A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 6.8A
Drain-source On Resistance-Max 0.52Ohm
Pulsed Drain Current-Max (IDM) 17A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 166 mJ

Compliance

RoHS Status RoHS Compliant

Alternative Model

No data

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