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NTD5804NT4G
ON SemiconductorRoHS
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Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET NFET DPAK 40V 69A 8.5mOhm
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Inventory: 929
Minimum: 1
Total Price: USD $1.34
Unit Price: USD $1.34235
≥1 USD $1.34235
≥10 USD $1.102
≥100 USD $1.0678
≥500 USD $1.03265
≥1000 USD $0.99845
Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Dimensions
Height 2.38mm
Length 6.73mm
Width 6.22mm
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 71W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 71W
Case Connection DRAIN
Turn On Delay Time 11.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2850pF @ 25V
Current - Continuous Drain (Id) @ 25°C 69A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 18.7ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.9 ns
Turn-Off Delay Time 26.8 ns
Continuous Drain Current (ID) 69A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0085Ohm
Drain to Source Breakdown Voltage 40V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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