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IRF740B
ON SemiconductorRoHS
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Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Tube Through Hole N-Channel Single Mosfet Transistor 10A Tc 10A 134W 85ns
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Inventory: 6880
Minimum: 1
Total Price: USD $0.38
Unit Price: USD $0.38285
≥1 USD $0.38285
≥10 USD $0.31445
≥100 USD $0.304
≥500 USD $0.2945
≥1000 USD $0.285
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220-3
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Voltage 400V
Power Dissipation-Max 134W Tc
Element Configuration Single
Current 10A
Power Dissipation 134W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 540mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Rise Time 80ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 85 ns
Turn-Off Delay Time 125 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 400V
Input Capacitance 1.8nF
Drain to Source Resistance 430mOhm
Rds On Max 540 mΩ
Nominal Vgs 4 V
Compliance
REACH SVHC Unknown
RoHS Status RoHS Compliant
Alternative Model
No data
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