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DMN3112SSS-13
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 6A 8SOP
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Inventory: 4279
Minimum: 1
Total Price: USD $4.67
Unit Price: USD $4.67495
≥1 USD $4.67495
≥10 USD $3.8361
≥100 USD $3.7164
≥500 USD $3.5967
≥1000 USD $3.47605
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 850.995985mg
Transistor Element Material SILICON
Dimensions
Height 1.5mm
Length 4.95mm
Width 3.9mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 57m Ω @ 5.8A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 268pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.057Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 24A
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