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NTTFS4823NTWG

ON Semiconductor
RoHS
/
Package 8-PowerWDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description Tape & Reel (TR) Surface Mount N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 7.1A Ta 50A Tc 17.5A 4W 4ns
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Total Price: USD $0.25
Unit Price: USD $0.2489
≥1 USD $0.2489
≥10 USD $0.20425
≥100 USD $0.19855
≥500 USD $0.1919
≥1000 USD $0.18525

Technical Details

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Pin Count 8
JESD-30 Code S-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 660mW Ta 32.9W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 4W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1013pF @ 12V
Current - Continuous Drain (Id) @ 25°C 7.1A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 17.5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 50A
Drain to Source Breakdown Voltage 30V

Alternative Model

No data

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