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IRFSL5620PBF
Infineon TechnologiesRoHS
/
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 24A TO262
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Inventory: 8152
Minimum: 1
Total Price: USD $5.34
Unit Price: USD $5.3428
≥1 USD $5.3428
≥10 USD $4.38425
≥100 USD $4.24745
≥500 USD $4.1097
≥1000 USD $3.9729
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Supplier Device Package TO-262
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 144W Tc
Element Configuration Single
Power Dissipation 144W
Turn On Delay Time 8.6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 77.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 50V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 14.6ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.9 ns
Turn-Off Delay Time 17.1 ns
Continuous Drain Current (ID) 24A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Input Capacitance 1.71nF
Drain to Source Resistance 77.5mOhm
Rds On Max 77.5 mΩ
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Dimensions
Height 9.652mm
Length 10.668mm
Width 4.826mm
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