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NTD5807NT4G
ON SemiconductorRoHS
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Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 23A DPAK
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Inventory: 4548
Minimum: 1
Total Price: USD $15.47
Unit Price: USD $15.46505
≥1 USD $15.46505
≥10 USD $12.68915
≥100 USD $12.293
≥500 USD $11.8959
≥1000 USD $11.49975
Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Dimensions
Height 2.38mm
Length 6.73mm
Width 6.22mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 33W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 33W
Case Connection DRAIN
Turn On Delay Time 11.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 31m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 603pF @ 25V
Current - Continuous Drain (Id) @ 25°C 23A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 20.4 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 15.6 ns
Continuous Drain Current (ID) 23A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
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