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FDW254P
ON SemiconductorRoHS
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Package 8-TSSOP (0.173, 4.40mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 9.2A 8-TSSOP
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Inventory: 7119
Minimum: 1
Total Price: USD $0.55
Unit Price: USD $0.5529
≥1 USD $0.5529
≥10 USD $0.4541
≥100 USD $0.43985
≥500 USD $0.4256
≥1000 USD $0.41135
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8
Supplier Device Package 8-TSSOP
Dimensions
Height 1mm
Length 3mm
Width 4.4mm
Compliance
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series PowerTrench?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 12MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Current Rating -9.2A
Number of Elements 1
Power Dissipation-Max 1.3W Ta
Power Dissipation 1.3W
Turn On Delay Time 15 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 12mOhm @ 9.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5878pF @ 10V
Current - Continuous Drain (Id) @ 25°C 9.2A Ta
Gate Charge (Qg) (Max) @ Vgs 96nC @ 4.5V
Rise Time 15ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 210 ns
Continuous Drain Current (ID) 9.2A
Threshold Voltage 600mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Input Capacitance 5.878nF
Drain to Source Resistance 12mOhm
Rds On Max 12 mΩ
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