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IRF640STRR
Vishay SiliconixRoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 18A D2PAK
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Inventory: 9408
Minimum: 1
Total Price: USD $0.38
Unit Price: USD $0.379078
≥1 USD $0.379078
≥10 USD $0.357622
≥100 USD $0.337388
≥500 USD $0.318287
≥1000 USD $0.300267
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Weight 1.437803g
Dimensions
Height 4.83mm
Length 10.67mm
Width 9.65mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Current Rating 18A
Number of Channels 1
Power Dissipation-Max 3.1W Ta 130W Tc
Element Configuration Single
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 51ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Input Capacitance 1.3nF
Drain to Source Resistance 180mOhm
Rds On Max 180 mΩ
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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