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IRLML6401TR
Infineon TechnologiesRoHS
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Package TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 12V 4.3A SOT-23
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Inventory: 4869
Minimum: 10
Total Price: USD $0.52
Unit Price: USD $0.051545
≥10 USD $0.051545
≥100 USD $0.041844
≥300 USD $0.041844
≥3000 USD $0.033454
≥6000 USD $0.030519
≥9000 USD $0.02911
Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Compliance
RoHS Status Non-RoHS Compliant
Technical
Packaging Cut Tape (CT)
Published 2003
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 4.3A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 830pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.3A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 5V
Drain to Source Voltage (Vdss) 12V
JEDEC-95 Code TO-236AB
Drain Current-Max (Abs) (ID) 4.3A
Drain-source On Resistance-Max 0.05Ohm
Pulsed Drain Current-Max (IDM) 34A
DS Breakdown Voltage-Min 12V
Avalanche Energy Rating (Eas) 33 mJ
Power Dissipation-Max (Abs) 1.3W
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