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IRLL014NTR

Infineon Technologies
RoHS
/
Package TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 2A SOT223
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Inventory: 5051
Minimum: 1
Total Price: USD $0.27
Unit Price: USD $0.26885
≥1 USD $0.26885
≥10 USD $0.2204
≥100 USD $0.21375
≥500 USD $0.2071
≥1000 USD $0.20045

Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1999
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 140m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
Drain Current-Max (Abs) (ID) 2A
Drain-source On Resistance-Max 0.14Ohm
Pulsed Drain Current-Max (IDM) 16A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 32 mJ

Compliance

RoHS Status Non-RoHS Compliant

Alternative Model

C3M0075120D
Cree/Wolfspeed

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