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IRLL014TR
Vishay SiliconixRoHS
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Package TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 2.7A SOT223
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Inventory: 5033
Minimum: 1
Total Price: USD $0.1
Unit Price: USD $0.1007
≥1 USD $0.1007
≥500 USD $0.08265
≥1000 USD $0.08075
≥2000 USD $0.0779
≥5000 USD $0.07505
≥10000 USD $0.06745
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 250.212891mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Current Rating 2.7A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Voltage 55V
Power Dissipation-Max 2W Ta 3.1W Tc
Current 2A
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Case Connection DRAIN
Turn On Delay Time 9.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 1.6A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.7A Tc
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 5V
Rise Time 110ns
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±10V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 2.7A
Gate to Source Voltage (Vgs) 10V
Drain-source On Resistance-Max 0.2Ohm
Dimensions
Height 1.8mm
Length 6.7mm
Width 3.7mm
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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