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IRFU210
Vishay SiliconixRoHS
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Package TO-251-3 Short Leads, IPak, TO-251AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 2.6A I-PAK
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Inventory: 8767
Minimum: 1
Total Price: USD $0.36
Unit Price: USD $0.36005
≥1 USD $0.36005
≥10 USD $0.29545
≥100 USD $0.28595
≥500 USD $0.27645
≥1000 USD $0.2679
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Supplier Device Package TO-251AA
Weight 329.988449mg
Dimensions
Height 6.22mm
Length 6.73mm
Width 2.38mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Current Rating 2.6A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 25W Tc
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 8.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.6A Tc
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Rise Time 17ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.9 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 2.6A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Input Capacitance 140pF
Drain to Source Resistance 1.5Ohm
Rds On Max 1.5 Ω
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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