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Infineon TechnologiesRoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 4.2A 8-SOIC
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Inventory: 6498
Minimum: 1
Total Price: USD $8.91
Unit Price: USD $8.91005
≥1 USD $8.91005
≥10 USD $7.3112
≥100 USD $7.08225
≥500 USD $6.85425
≥1000 USD $6.6253
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Dimensions
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Current Rating 4.2A
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Power Dissipation 2.5W
Turn On Delay Time 5.9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 85mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.2A Ta
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
Rise Time 13ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Input Capacitance 310pF
Drain to Source Resistance 85mOhm
Rds On Max 85 mΩ
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