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IRFPE40
Vishay SiliconixRoHS
/
Package TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 5.4A TO-247AC
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Inventory: 6501
Minimum: 1
Total Price: USD $0.56
Unit Price: USD $0.5643
≥1 USD $0.5643
≥10 USD $0.46265
≥100 USD $0.4484
≥500 USD $0.43415
≥1000 USD $0.4199
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Dimensions
Height 20.7mm
Length 15.87mm
Width 5.31mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status Non-RoHS Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 3.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.4A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 36 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 5.4A
Threshold Voltage 4V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 2Ohm
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 22A
Avalanche Energy Rating (Eas) 490 mJ
Nominal Vgs 4 V
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