Welcome to AAA CHIPS! ｜
    ｜
  • English

All Products

View All Products

IRL3716LPBF

Infineon Technologies
RoHS
/
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 180A TO-262
PDF
/
Favorite
Payment Methods:
Delivery Services:
Pricing & Ordering
Inventory: 7817
Minimum: 1
Total Price: USD $1.58
Unit Price: USD $1.57795
≥1 USD $1.57795
≥10 USD $1.29485
≥100 USD $1.254
≥500 USD $1.2141
≥1000 USD $1.17325

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package TO-262

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Current Rating 180A
Power Dissipation-Max 210W Tc
Element Configuration Single
Power Dissipation 210W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5090pF @ 10V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 79nC @ 4.5V
Rise Time 140ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 180A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Input Capacitance 5.09nF
Drain to Source Resistance 4.8mOhm
Rds On Max 4 mΩ

Alternative Model

2N6387
Rochester Electronics, LLC

Recommended For You

IXFT44N50P
IXYS