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IRF3709ZPBF
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 87A TO-220AB
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Inventory: 4687
Minimum: 1
Total Price: USD $0.62
Unit Price: USD $0.6175
≥1 USD $0.6175
≥10 USD $0.5073
≥100 USD $0.49115
≥500 USD $0.475
≥1000 USD $0.4598
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 8.763mm
Length 10.5156mm
Width 4.69mm
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 6.3MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 87A
Number of Elements 1
Power Dissipation-Max 79W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 79mW
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.3m Ω @ 21A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2130pF @ 15V
Current - Continuous Drain (Id) @ 25°C 87A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Rise Time 41 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.7 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 87A
Threshold Voltage 2.25V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 42A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 60 mJ
Recovery Time 24 ns
Nominal Vgs 20 V
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