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IRF6626TR1
Infineon TechnologiesRoHS
/
Package DirectFET? Isometric ST
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 16A DIRECTFET
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Inventory: 4317
Minimum: 1
Total Price: USD $0.76
Unit Price: USD $0.75715
≥1 USD $0.75715
≥10 USD $0.6213
≥100 USD $0.60135
≥500 USD $0.58235
≥1000 USD $0.5624
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric ST
Number of Pins 7
Supplier Device Package DIRECTFET? ST
Compliance
REACH SVHC No SVHC
RoHS Status Non-RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 16A
Power Dissipation-Max 2.2W Ta 42W Tc
Power Dissipation 2.2W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.4mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2.35V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2380pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16A Ta 72A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V
Rise Time 15ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.5 ns
Turn-Off Delay Time 17 ns
Reverse Recovery Time 15 ns
Continuous Drain Current (ID) 16A
Threshold Voltage 2.35V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Input Capacitance 2.38nF
Drain to Source Resistance 4mOhm
Rds On Max 5.4 mΩ
Nominal Vgs 2.35 V
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