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NTD20N06L-001
ON SemiconductorRoHS
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Package TO-251-3 Short Leads, IPak, TO-251AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Tube Through Hole N-Channel Single Mosfet Transistor 20A Ta 20A 60W 62ns
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Inventory: 5542
Minimum: 1
Total Price: USD $4.65
Unit Price: USD $4.64645
≥1 USD $4.64645
≥10 USD $3.81235
≥100 USD $3.6936
≥500 USD $3.5739
≥1000 USD $3.45515
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn80Pb20)
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 20A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.36W Ta 60W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 60W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 48m Ω @ 10A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 990pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Rise Time 98ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 62 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 15V
Drain-source On Resistance-Max 0.048Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 128 mJ
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
No data
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