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IRF6635
Infineon TechnologiesRoHS
/
Package DirectFET? Isometric MX
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 32A DIRECTFET
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Inventory: 8385
Minimum: 1
Total Price: USD $1.05
Unit Price: USD $1.0507
≥1 USD $1.0507
≥10 USD $0.8626
≥100 USD $0.836
≥500 USD $0.80845
≥1000 USD $0.78185
Technical Details
Physical
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MX
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET?
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Silver/Nickel (Ag/Ni)
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XBCC-N3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 89W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.8m Ω @ 32A, 10V
Vgs(th) (Max) @ Id 2.35V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5970pF @ 15V
Current - Continuous Drain (Id) @ 25°C 32A Ta 180A Tc
Gate Charge (Qg) (Max) @ Vgs 71nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 32A
Drain-source On Resistance-Max 0.0018Ohm
Pulsed Drain Current-Max (IDM) 250A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 200 mJ
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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