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IRF6623TR1
Infineon TechnologiesRoHS
/
Package DirectFET? Isometric ST
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 16A DIRECTFET
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Inventory: 1530
Minimum: 1
Total Price: USD $1.76
Unit Price: USD $1.760228
≥1 USD $1.760228
≥10 USD $1.660601
≥100 USD $1.566601
≥500 USD $1.477923
≥1000 USD $1.394268
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric ST
Number of Pins 7
Supplier Device Package DIRECTFET? ST
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Resistance 5.7mOhm
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Current Rating 16A
Number of Elements 1
Power Dissipation-Max 1.4W Ta 42W Tc
Power Dissipation 2.1W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1360pF @ 10V
Current - Continuous Drain (Id) @ 25°C 16A Ta 55A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 40ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 12 ns
Reverse Recovery Time 20 ns
Continuous Drain Current (ID) 55A
Threshold Voltage 2.2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Input Capacitance 1.36nF
Drain to Source Resistance 4.4Ohm
Rds On Max 5.7 mΩ
Nominal Vgs 2.2 V
Dimensions
Width 3.95mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status Non-RoHS Compliant
Lead Free Lead Free
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