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SI4384DY-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 10A 8-SOIC
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Inventory: 1779
Minimum: 1
Total Price: USD $0.54
Unit Price: USD $0.5377
≥1 USD $0.5377
≥10 USD $0.4408
≥100 USD $0.4275
≥500 USD $0.41325
≥1000 USD $0.39995

Technical Details

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON

Dimensions

Height 1.5494mm
Length 4.9784mm
Width 3.9878mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series TrenchFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 8.5MOhm
Additional Feature FAST SWITCHING
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.47W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.47W
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Rise Time 13 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 30V
Nominal Vgs 1 V

Alternative Model

BB837E6327HTSA1
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