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SI3441BDV-T1-E3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage SOT-23-6 Thin, TSOT-23-6
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 2.45A 6-TSOP
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Inventory: 4680
Minimum: 1
Total Price: USD $0.15
Unit Price: USD $0.15105
≥1 USD $0.15105
≥500 USD $0.12445
≥1000 USD $0.1197
≥2000 USD $0.1159
≥5000 USD $0.1121
≥10000 USD $0.1007
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 130mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Power Dissipation-Max 860mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 860mW
Turn On Delay Time 15 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 90m Ω @ 3.3A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.45A Ta
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Rise Time 55 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 55 ns
Turn-Off Delay Time 30 ns
Reverse Recovery Time 50 ns
Continuous Drain Current (ID) -2.45A
Threshold Voltage -850mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage -20V
Nominal Vgs -850 mV
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 990.6μm
Length 3.0988mm
Width 3mm
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