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SI2305DS-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET P-CH 8V 3.5A 3-Pin SOT-23 T/R
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Inventory: 9462
Minimum: 1
Total Price: USD $0.11
Unit Price: USD $0.10735
≥1 USD $0.10735
≥500 USD $0.08835
≥1000 USD $0.0855
≥2000 USD $0.08265
≥5000 USD $0.08075
≥10000 USD $0.0722

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3

Technical

Packaging Cut Tape (CT)
Published 2008
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 52mOhm
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1.25W
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 13 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 52m Ω @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1245pF @ 4V
Current - Continuous Drain (Id) @ 25°C 3.5A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 25 ns
Fall Time (Typ) 25 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 3.5A
Threshold Voltage -800mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 8V
Dual Supply Voltage -8V
Nominal Vgs -800 mV

Dimensions

Width 1.397mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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