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SI2309DS-T1-E3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 60V 1.25A SOT23-3
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Inventory: 5209
Minimum: 1
Total Price: USD $4.03
Unit Price: USD $4.028
≥1 USD $4.028
≥10 USD $3.30505
≥100 USD $3.2015
≥500 USD $3.09795
≥1000 USD $2.99535
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3 (TO-236)
Weight 1.437803g
Dimensions
Height 1.02mm
Length 3.04mm
Width 1.4mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 340mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Voltage 60V
Power Dissipation-Max 1.25W Ta
Element Configuration Single
Current 12A
Power Dissipation 1.25W
Turn On Delay Time 10.5 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 340mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 11.5ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 11.5 ns
Turn-Off Delay Time 15.5 ns
Continuous Drain Current (ID) -1.25A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Drain to Source Resistance 340mOhm
Rds On Max 340 mΩ
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