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BTS282Z E3230

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-7
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 49V 80A TO220-7
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Inventory: 1688
Minimum: 1
Total Price: USD $96.08
Unit Price: USD $96.077709
≥1 USD $96.077709
≥10 USD $90.639347
≥100 USD $85.508818
≥500 USD $80.668697
≥1000 USD $76.102546

Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-7
Surface Mount NO
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2001
Series TEMPFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSFM-T7
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.5m Ω @ 36A, 10V
Vgs(th) (Max) @ Id 2V @ 240μA
Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 232nC @ 10V
Drain to Source Voltage (Vdss) 49V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 80A
Drain-source On Resistance-Max 0.0095Ohm
Pulsed Drain Current-Max (IDM) 320A
DS Breakdown Voltage-Min 49V
Avalanche Energy Rating (Eas) 2000 mJ
FET Feature Temperature Sensing Diode

Alternative Model

BUK7624-55,118
NXP USA Inc.

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