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BSP372 E6327
Infineon TechnologiesRoHS
/
Package TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 1.7A SOT-223
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Inventory: 2507
Minimum: 1
Total Price: USD $9.87
Unit Price: USD $9.8724
≥1 USD $9.8724
≥10 USD $8.10065
≥100 USD $7.84795
≥500 USD $7.5943
≥1000 USD $7.3416
Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Compliance
RoHS Status Non-RoHS Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series SIPMOS?
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.8W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 310m Ω @ 1.7A, 5V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.7A Ta
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±14V
Drain Current-Max (Abs) (ID) 1.7A
Drain-source On Resistance-Max 0.31Ohm
Pulsed Drain Current-Max (IDM) 6.8A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 45 mJ
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