Welcome to AAA CHIPS! ｜ info@3achips.com
- English
Account & Orders
New Account? Start here
IRF6668TR1PBF
Infineon TechnologiesRoHS
/
Package DirectFET? Isometric MZ
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 80V 55A DIRECTFET
PDF
/
Favorite
Payment Methods:
Delivery Services:
Pricing & Ordering
Inventory: 8208
Minimum: 1
Total Price: USD $11.82
Unit Price: USD $11.8237
≥1 USD $11.8237
≥10 USD $9.70235
≥100 USD $9.39835
≥500 USD $9.0953
≥1000 USD $8.79225
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MZ
Number of Pins 5
Supplier Device Package DIRECTFET? MZ
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 15mOhm
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 80V
Technology MOSFET (Metal Oxide)
Current Rating 55A
Number of Elements 1
Power Dissipation-Max 2.8W Ta 89W Tc
Element Configuration Dual
Power Dissipation 2.8W
Turn On Delay Time 19 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 15mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1320pF @ 25V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 7.1 ns
Continuous Drain Current (ID) 44A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
Dual Supply Voltage 80V
Input Capacitance 1.32nF
Drain to Source Resistance 12mOhm
Rds On Max 15 mΩ
Nominal Vgs 4 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Dimensions
Height 533.4μm
Length 6.35mm
Width 5.05mm
Alternative Model
Recommended For You