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IRF6665TR1PBF
Infineon TechnologiesRoHS
/
Package DirectFET? Isometric SH
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 4.2A DIRECTFET
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Inventory: 4412
Minimum: 1
Total Price: USD $1.53
Unit Price: USD $1.5314
≥1 USD $1.5314
≥10 USD $1.25685
≥100 USD $1.2179
≥500 USD $1.178
≥1000 USD $1.13905
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric SH
Number of Pins 5
Supplier Device Package DIRECTFET? SH
Dimensions
Height 506μm
Length 4.826mm
Width 3.95mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 62MOhm
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 4.2A
Number of Elements 1
Power Dissipation-Max 2.2W Ta 42W Tc
Element Configuration Single
Power Dissipation 42W
Turn On Delay Time 7.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 62mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.2A Ta 19A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 2.8ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.3 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 3.4A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Input Capacitance 530pF
Drain to Source Resistance 62mOhm
Rds On Max 62 mΩ
Nominal Vgs 3 V
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