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IRF6631TR1PBF
Infineon TechnologiesRoHS
/
Package DirectFET? Isometric SQ
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 13A DIRECTFET
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Inventory: 9259
Minimum: 1
Total Price: USD $1.33
Unit Price: USD $1.3281
≥1 USD $1.3281
≥10 USD $1.08965
≥100 USD $1.05545
≥500 USD $1.02125
≥1000 USD $0.988
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric SQ
Number of Pins 5
Supplier Device Package DIRECTFET? SQ
Dimensions
Height 506μm
Length 4.826mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 13A
Power Dissipation-Max 2.2W Ta 42W Tc
Power Dissipation 42W
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13A Ta 57A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Rise Time 18ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.9 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 1.45nF
Drain to Source Resistance 10.8mOhm
Rds On Max 7.8 mΩ
Nominal Vgs 1.8 V
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