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IRF6611TRPBF
Infineon TechnologiesRoHS
/
Package DirectFET? Isometric MX
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 32A DIRECTFET
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Inventory: 2242
Minimum: 1
Total Price: USD $0.97
Unit Price: USD $0.96805
≥1 USD $0.96805
≥10 USD $0.7942
≥100 USD $0.7695
≥500 USD $0.7448
≥1000 USD $0.7201
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MX
Number of Pins 5
Transistor Element Material SILICON
Dimensions
Height 506μm
Length 6.35mm
Width 5.05mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 32A
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.9W Ta 89W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 89W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6m Ω @ 27A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4860pF @ 15V
Current - Continuous Drain (Id) @ 25°C 32A Ta 150A Tc
Gate Charge (Qg) (Max) @ Vgs 56nC @ 4.5V
Rise Time 57ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.5 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0026Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 220A
Avalanche Energy Rating (Eas) 310 mJ
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