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FQA17N40
ON SemiconductorRoHS
/
Package TO-3P-3, SC-65-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
QFET? Tube Through Hole N-Channel Mosfet Transistor 17.2A Tc 17.2A 190W 105ns
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Inventory: 4601
Minimum: 1
Total Price: USD $1.61
Unit Price: USD $1.6112
≥1 USD $1.6112
≥10 USD $1.3224
≥100 USD $1.2806
≥500 USD $1.23975
≥1000 USD $1.19795
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Supplier Device Package TO-3P
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 400V
Technology MOSFET (Metal Oxide)
Current Rating 17.2A
Number of Elements 1
Power Dissipation-Max 190W Tc
Element Configuration Single
Power Dissipation 190W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 270mOhm @ 8.6A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 17.2A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 185ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 105 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 17.2A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 400V
Input Capacitance 2.3nF
Drain to Source Resistance 270mOhm
Rds On Max 270 mΩ
Alternative Model
No data
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