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HUF76645P3

ON Semiconductor
RoHS
/
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description UltraFET? Tube Through Hole N-Channel Mosfet Transistor 75A Tc 75A 310W 175ns
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Inventory: 5859
Minimum: 1
Total Price: USD $2.3
Unit Price: USD $2.299
≥1 USD $2.299
≥10 USD $1.8867
≥100 USD $1.8278
≥500 USD $1.7689
≥1000 USD $1.71

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220-3

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series UltraFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 75A
Number of Elements 1
Power Dissipation-Max 310W Tc
Element Configuration Single
Power Dissipation 310W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 14mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 153nC @ 10V
Rise Time 106ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 175 ns
Turn-Off Delay Time 69 ns
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 100V
Input Capacitance 4.4nF
Drain to Source Resistance 12mOhm
Rds On Max 14 mΩ

Alternative Model

No data

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