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FQP7N80
ON SemiconductorRoHS
/
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
QFET? Tube Through Hole N-Channel Mosfet Transistor 6.6A Tc 6.6A 167W 55ns
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Inventory: 8733
Minimum: 1
Total Price: USD $0.66
Unit Price: USD $0.66405
≥1 USD $0.66405
≥10 USD $0.5453
≥100 USD $0.5282
≥500 USD $0.5111
≥1000 USD $0.494
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 6.6A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 167W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 167W
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 3.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1850pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.6A Tc
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Rise Time 80ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 55 ns
Turn-Off Delay Time 95 ns
Continuous Drain Current (ID) 6.6A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 26.4A
Avalanche Energy Rating (Eas) 580 mJ
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
No data
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