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HUF76633S3S
ON SemiconductorRoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
UltraFET? Tube Surface Mount N-Channel Mosfet Transistor 39A Tc 39A 145W 83ns
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Inventory: 8367
Minimum: 1
Total Price: USD $5.1
Unit Price: USD $5.0996
≥1 USD $5.0996
≥10 USD $4.18475
≥100 USD $4.05365
≥500 USD $3.92255
≥1000 USD $3.7924
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series UltraFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish MATTE TIN
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 38A
Time@Peak Reflow Temperature-Max (s) 30
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 145W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 145W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 39A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1820pF @ 25V
Current - Continuous Drain (Id) @ 25°C 39A Tc
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Rise Time 55ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 83 ns
Turn-Off Delay Time 63 ns
Continuous Drain Current (ID) 39A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 267 mJ
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
No data
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