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FQPF16N25
ON SemiconductorRoHS
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Package TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
QFET? Tube Through Hole N-Channel Mosfet Transistor 9.5A Tc 15.6A 50W Tc 250V
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Inventory: 1878
Minimum: 1
Total Price: USD $0.81
Unit Price: USD $0.8056
≥1 USD $0.8056
≥10 USD $0.6612
≥100 USD $0.6403
≥500 USD $0.62035
≥1000 USD $0.59945
Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 50W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 230m Ω @ 4.75A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.5A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 15.6A
Drain-source On Resistance-Max 0.27Ohm
Pulsed Drain Current-Max (IDM) 62.4A
DS Breakdown Voltage-Min 250V
Avalanche Energy Rating (Eas) 410 mJ
Alternative Model
No data
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