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HUF75329D3
ON SemiconductorRoHS
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Package TO-251-3 Short Leads, IPak, TO-251AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
UltraFET? Tube Through Hole N-Channel Mosfet Transistor 20A Tc 20A 128W Tc 55V
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Inventory: 8075
Minimum: 1
Total Price: USD $0.94
Unit Price: USD $0.9405
≥1 USD $0.9405
≥10 USD $0.7714
≥100 USD $0.74765
≥500 USD $0.72295
≥1000 USD $0.6992
Technical Details
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series UltraFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 128W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 20V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 20A
Drain-source On Resistance-Max 0.026Ohm
DS Breakdown Voltage-Min 55V
Physical
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount YES
Transistor Element Material SILICON
Alternative Model
No data
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