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FQP16N25C

ON Semiconductor
RoHS
/
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description QFET? Tube Through Hole N-Channel Mosfet Transistor 15.6A Tc 15.6A 139W 105ns
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Inventory: 2401
Minimum: 1
Total Price: USD $0.42
Unit Price: USD $0.41515
≥1 USD $0.41515
≥10 USD $0.34105
≥100 USD $0.32965
≥500 USD $0.3192
≥1000 USD $0.30875

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220-3
Weight 1.8g

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series QFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 250V
Technology MOSFET (Metal Oxide)
Current Rating 16A
Number of Elements 1
Power Dissipation-Max 139W Tc
Element Configuration Single
Power Dissipation 139W
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 270mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15.6A Tc
Gate Charge (Qg) (Max) @ Vgs 53.5nC @ 10V
Rise Time 130ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 105 ns
Turn-Off Delay Time 135 ns
Continuous Drain Current (ID) 15.6A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 250V
Input Capacitance 1.08nF
Drain to Source Resistance 270mOhm
Rds On Max 270 mΩ

Dimensions

Height 9.4mm
Length 10.1mm
Width 4.7mm

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Alternative Model

No data

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