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FQB19N20TM
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R
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Inventory: 800
Minimum: 1
Total Price: USD $2.49
Unit Price: USD $2.492725
≥1 USD $2.492725
≥10 USD $2.351618
≥100 USD $2.218507
≥500 USD $2.092934
≥1000 USD $1.974456
Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 16 hours ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 150mOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 19.4A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.13W Ta 140W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.13W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 9.7A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 19.4A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 190 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 80 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 19.4A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 78A
Avalanche Energy Rating (Eas) 250 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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