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IRFR9020TRLPBF
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 50V 9.9A DPAK
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Inventory: 3084
Minimum: 1
Total Price: USD $2.95
Unit Price: USD $2.949887
≥1 USD $2.949887
≥10 USD $2.782903
≥100 USD $2.625388
≥500 USD $2.476781
≥1000 USD $2.336589
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 280MOhm
Terminal Finish TIN
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 42W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Case Connection DRAIN
Turn On Delay Time 8.2 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 280m Ω @ 5.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.9A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 67 ns
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) -9.9A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 50V
Avalanche Energy Rating (Eas) 250 mJ
Dimensions
Height 2.39mm
Length 6.73mm
Width 6.22mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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