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IPD90N04S304ATMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Single N-Channel 40 V 3.6 mOhm 60 nC OptiMOS? Power Mosfet - TO-252-3-11
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Inventory: 9852
Minimum: 1
Total Price: USD $1.35
Unit Price: USD $1.349
≥1 USD $1.349
≥10 USD $1.1077
≥100 USD $1.07255
≥500 USD $1.03835
≥1000 USD $1.0032
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series OptiMOS?
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 136W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.6m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 90A
Drain-source On Resistance-Max 0.0036Ohm
Pulsed Drain Current-Max (IDM) 360A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 260 mJ
Compliance
RoHS Status ROHS3 Compliant
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