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BSP295L6327HTSA1
Infineon TechnologiesRoHS
/
Package TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
SIPMOS? Tape & Reel (TR) Surface Mount N-Channel Mosfet Transistor 1.8A Ta 1.8A 1.8W 19ns
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Inventory: 8492
Minimum: 1
Total Price: USD $0.52
Unit Price: USD $0.524416
≥1 USD $0.524416
≥10 USD $0.494733
≥100 USD $0.466731
≥500 USD $0.440309
≥1000 USD $0.415389
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
Series SIPMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.8W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
Case Connection DRAIN
Turn On Delay Time 5.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 300m Ω @ 1.8A, 10V
Vgs(th) (Max) @ Id 1.8V @ 400μA
Input Capacitance (Ciss) (Max) @ Vds 368pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.8A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 9.9ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 1.8A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.5Ohm
Pulsed Drain Current-Max (IDM) 7.2A
DS Breakdown Voltage-Min 60V
Alternative Model
No data
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